Intern_Design Engineer

As an intern in the NVE Design Engineering at Micron Semiconductor Italia, you will contribute to the development of memory products that are best‑in‑class, using your specialized knowledge.

Responsibilities

• Support for the design, implementation, and validation of analog and mixed‑signal circuits used in NAND Flash. The role spans the complete design lifecycle.
• Contribute to design and develop analog and mixed‑signal circuits such as charge pumps, amplifiers, voltage regulators, data converters (ADC/DAC), bandgap references, sensor interfaces, and power management blocks.
• Perform transistor‑level design and optimization to meet performance, power, area, noise, and reliability targets.
• Run and analyze circuit simulations (DC, AC, transient, noise, Monte Carlo, corners) to verify functionality and robustness across process, voltage, and temperature variations.
• Contribute to validation design performance and functionality by running block level simulations using standard industry simulators.

Minimum Qualifications

• B.S. in Electronic Engineering, or a related field.
• Strong problem‑solving and communication skills.
• Excellent teamwork attitude.
• Good verbal communication skills (English).

Preferred Qualifications

• Proficiency in analog and mixed‑signal CMOS circuit design.
• Understanding of device physics, noise, variability, reliability, and power integrity.
• Some experience with industry‑standard simulation tools (e.g., SPICE‑based simulators).
• Ability to convey complex technical concepts in verbal and written form.

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.