GaN Gate-Driver Architectures for High-Efficiency Inverters
Descrizione dell'offerta
A leading semiconductor company is looking for a researcher to investigate Gallium Nitride (GaN) technology for inverter modules. The role involves conducting a comprehensive technology analysis, designing an optimized gate driver architecture for GaN devices, and validating performance through bench testing. Candidates should have strong skills in analog circuit design, layout design, and collaboration with cross-functional teams. This opportunity offers a chance to contribute to innovative power electronics solutions.
#J-18808-Ljbffr
#J-18808-Ljbffr